Application of CMOS Technology to Silicon Photomultiplier Sensors
نویسندگان
چکیده
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.
منابع مشابه
The Digital Silicon Photomultiplier – Principle of Operation and Intrinsic Detector Performance
We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bi...
متن کاملNeural Monitoring With CMOS Image Sensors
Implantable image sensors have several biomedical applications due to their miniature size, light weight, and low power consumption achieved through sub-micron standard CMOS (Complementary Metal Oxide Semiconductor) technologies. The main applications are in specific cell labeling, neural activity detection, and biomedical imaging. In this paper the recent research studies on implantable CMOS i...
متن کاملSingle photon detector fabricated in a complementary metal–oxide–semiconductor high-voltage technology
In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor ~CMOS! high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias ...
متن کاملA CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System
We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equival...
متن کاملCMOS Solid-State Photomultiplier for Detecting Scintillation Light in Harsh Environments
A CMOS SSPM coupled to a scintillation crystal uses an array of CMOS Geiger-mode avalanche photodiode (GPD) pixels to collect light and produce a signal proportional to the energy of the radiation. Each pixel acts as a binary photon detector, but the summed output is an analog representation of the total photon intensity. We have fabricated arrays of GPD pixels in a CMOS environment, which make...
متن کامل